tzs4678...tzs4717 vishay semiconductors rev. a3, 12-mar-01 1 (6) www.vishay.com document number 85613 silicon epitaxial planar zdiodes features zener voltage specified at 50 a maximum delta v z given from 10 a to 100 a very high stability low noise applications voltage stabilization 96 12009 order instruction type ordering code remarks tzs4678 tzs4678gs08 tape and reel absolute maximum ratings t j = 25 c parameter test conditions type symbol value unit power dissipation r thja 300k/w p v 500 mw zcurrent i z p v /v z ma junction temperature t j 175 c storage temperature range t stg 65...+175 c maximum thermal resistance t j = 25 c parameter test conditions symbol value unit junction ambient on pc board 50 mmx50 mmx1.6 mm r thja 500 k/w electrical characteristics t j = 25 c parameter test conditions type symbol min typ max unit forward voltage i f =100ma v f 1.5 v
tzs4678...tzs4717 vishay semiconductors rev. a3, 12-mar-01 2 (6) www.vishay.com document number 85613 type 1) zener voltage v z @ i z = 50 a max. reverse current test voltage max. zener current max. voltage change t ype 1) typ. 1) min. max. i r 3) v r 3) i zm 2) v z 4) v v v a v ma v tzs4678 1.8 1.710 1.890 7.5 1.0 120 0.70 tzs4679 2.0 1.900 2.100 5.0 1.0 110 0.70 tzs4680 2.2 2.090 2.310 4.0 1.0 100 0.75 tzs4681 2.4 2.280 2.520 2.0 1.0 95 0.80 tzs4682 2.7 2.565 2.835 1.0 1.0 90 0.85 tzs4683 3.0 2.850 3.150 0.8 1.0 85 0.90 tzs4684 3.3 3.135 3.465 7.5 1.5 80 0.95 tzs4685 3.6 3.420 3.780 7.5 2.0 75 0.95 tzs4686 3.9 3.705 4.095 5.0 2.0 70 0.97 tzs4687 4.3 4.085 4.515 4.0 2.0 65 0.99 tzs4688 4.7 4.465 4.935 10 3.0 60 0.99 tzs4689 5.1 4.845 5.355 10 3.0 55 0.97 tzs4690 5.6 5.320 5.880 10 4.0 50 0.96 tzs4691 6.2 5.890 6.510 10 5.0 45 0.95 tzs4692 6.8 6.460 7.140 10 5.1 35 0.90 tzs4693 7.5 7.125 7.875 10 5.7 31.8 0.75 tzs4694 8.2 7.790 8.610 1.0 6.2 29.0 0.50 tzs4695 8.7 8.265 9.135 1.0 6.6 27.4 0.10 tzs4696 9.1 8.645 9.555 1.0 6.9 26.2 0.08 tzs4697 10 9.500 10.50 1.0 7.6 24.8 0.10 tzs4698 11 10.45 11.55 0,05 8.4 21.6 0.11 tzs4699 12 11.40 12.60 0.05 9.1 20.4 0.12 tzs4700 13 12.35 13.65 0.05 9.8 19.0 0.13 tzs4701 14 13.30 14.70 0.05 10.6 17.5 0.14 tzs4702 15 14.25 15.75 0.05 11.4 16.3 0.15 tzs4703 16 15.20 16.80 0.05 12.1 15.4 0.16 tzs4704 17 16.15 17.85 0.05 12.9 14.5 0.17 tzs4705 18 17.10 18.90 0.05 13.6 13.2 0.18 tzs4706 19 18.05 19.95 0.05 14.4 12.5 0.19 tzs4707 20 19.00 21.00 0.01 15.2 11.9 0.20 tzs4708 22 20.90 23.10 0.01 16.7 10.8 0.22 tzs4709 24 22.80 25.20 0.01 18.2 9.9 0.24 tzs4710 25 23.75 26.25 0.01 19.0 9.5 0.25 tzs4711 27 25.65 28.35 0.01 20.4 8.8 0.27 tzs4712 28 26.60 29.40 0.01 21.2 8.5 0.28 tzs4713 30 28.50 31.50 0.01 22.8 7.9 0.30 tzs4714 33 31.35 34.65 0.01 25.0 7.2 0.33 tzs4715 36 34.20 37.80 0.01 27.3 6.6 0.36 tzs4716 39 37.05 40.95 0.01 29.6 6.1 0.39 tzs4717 43 40.85 45.15 0.01 32.6 5.5 0.43
tzs4678...tzs4717 vishay semiconductors rev. a3, 12-mar-01 3 (6) www.vishay.com document number 85613 1.) toleranzing and voltage designation (v z ). the type numbers shown have a standard tolerance of 5% on the nominal zener voltage. 2.) maximum zener current ratings (i zm ). maximum zener current ratings are based on maximum zener voltage of the individual units. 3.) reverse leakage current (i r ). reverse leakage currents are guaranteed and measured at v r as shown on the table. 4.) maximum voltage change ( v z ). voltage change is equal to the difference between v z at 100 a and v z at 10 a. characteristics (t j = 25 c unless otherwise specified) 0 40 80 120 160 0 100 300 400 500 600 p total power dissipation ( mw ) tot t amb ambient temperature ( ? ? ? ? ?M? ? figure 1. total power dissipation vs. ambient temperature 0 5 10 15 20 1 10 100 1000 v voltage change ( mv ) z v z z-voltage ( v ) 25 95 9598 i z =5ma t j =25 ? figure 2. typical change of working voltage under operating conditions at t amb =25 c 60 0 60 120 180 0.8 0.9 1.0 1.1 1.2 1.3 v relative voltage change ztn t j junction temperature ( ? ? ?? ? ?? ? ??? ? ?? ? ? ?? ?? ?k ?? ? 10 4 /k 8 10 4 /k 4 10 4 /k 6 10 4 /k 4 10 4 /k 2 10 4 /k 2 10 4 /k 0 figure 3. typical change of working voltage vs. junction temperature 0102030 5 0 5 10 15 tk temperature coefficient of v ( 10 /k ) vz v z z-voltage ( v ) 50 95 9600 40 z 4 i z =5ma figure 4. temperature coefficient of vz vs. zvoltage
tzs4678...tzs4717 vishay semiconductors rev. a3, 12-mar-01 4 (6) www.vishay.com document number 85613 0 5 10 15 0 50 100 150 200 c diode capacitance ( pf ) d v z z-voltage ( v ) 25 95 9601 20 t j =25 5 c v r =2v figure 5. diode capacitance vs. zvoltage 0 0.2 0.4 0.6 0.8 0.001 0.01 0.1 1 10 100 1.0 95 9605 i forward current ( ma ) f v f forward voltage ( v ) t j =25 5 c figure 6. forward current vs. forward voltage 04 8 1216 20 95 9604 0 20 40 60 80 100 i z-current ( ma ) z v z z-voltage ( v ) p tot =500mw t amb =25 5 c figure 7. zcurrent vs. zvoltage 15 20 25 30 0 10 20 30 40 50 i z-current ( ma ) z v z z-voltage ( v ) 35 95 9607 p tot =500mw t amb =25 5 c figure 8. zcurrent vs. zvoltage 0 5 10 15 20 1 10 100 1000 r differential z-resistance ( ) z v z z-voltage ( v ) 25 95 9606 t j =25 5 c i z =1ma 5ma 10ma figure 9. differential zresistance vs. zvoltage
tzs4678...tzs4717 vishay semiconductors rev. a3, 12-mar-01 5 (6) www.vishay.com document number 85613 1 10 100 1000 z thermal resistance for pulse cond. (k/w) thp t p pulse length ( ms ) 95 9603 10 1 10 0 10 1 10 2 t p /t=0.5 t p /t=0.2 t p /t=0.1 t p /t=0.05 t p /t=0.02 t p /t=0.01 single pulse r thja =300k/w t=t jmax t amb i zm =(v z +(v z 2 +4r zj t/z thp ) 1/2 )/(2r zj ) figure 10. thermal response dimensions in mm 96 12071
tzs4678...tzs4717 vishay semiconductors rev. a3, 12-mar-01 6 (6) www.vishay.com document number 85613 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
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